| Channel Material | n-type semiconductor | p-type semiconductor |
| Gate Material | p-type semiconductor layers | n-type semiconductor layers |
| Majority Carriers | Electrons | Holes |
| Carrier Mobility | High (≈3× higher than holes), yielding faster switching and lower internal resistance. | Lower, resulting in slower response times and higher channel resistance. |
| Gate-to-Source Voltage (VGS) | Must be Negative or Zero (VGS≤0) to maintain reverse bias. | Must be Positive or Zero (VGS≥0) to maintain reverse bias. |
| Pinch-off Voltage (VP) | Negative value (e.g., VP=−4 V) | Positive value (e.g., VP=+4 V) |
| Drain-to-Source Voltage (VDS) | Positive (VDS>0) | Negative (VDS<0) |
| Drain Current (ID) Direction | Flows into the Drain terminal. | Flows out of the Drain terminal. |
| Schematic Symbol Arrow | Points inward toward the channel at the gate terminal. | Points outward away from the channel at the gate terminal. |
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