ece-1109 ECE-1109 Introduction to ECE
ECE Topics Explanation Table
| No. | Topic | Years of Appearance in PYQ |
|---|---|---|
| 1 | Pinch-off Voltage | 2015, 2021, 2024 |
| 2 | Gate-Source Cutoff Voltage | 2015, 2021, 2024 |
| 3 | BJT-JFET Difference | 2015, 2017, 2018, 2019, 2022, 2024 |
| 4 | Operation of P-Channel Depletion/Enhancement Type MOSFET | 2019, 2020, 2021, 2023, 2024 |
| 5 | Comparison Among Common Emitter, Base, and Collector Configuration | 2021, 2024 |
| 6 | Tunneling Effect | 2021, 2024 |
| 7 | Negative Resistance Region of a Tunnel Diode | 2021, 2024 |
| 8 | Regulated Power Supply (Design/Theory) | 2015, 2016, 2017, 2018, 2021 |
| 9 | Pi Filter and Process of Its Tuning | 2015, 2018, 2019, 2021 |
| 10 | Load Line and Q Point of a Diode Circuit | 2015, 2021 |
| 11 | Negative/Positive Temperature Coefficient (Conductors vs Semiconductors) | 2016, 2018, 2020, 2021 |
| 12 | Formation of Transition Capacitance in a P-N Junction | 2015, 2016, 2019, 2021 |
| 13 | Phenomena of Hall Effect and Its Application | 2016, 2017, 2018, 2019, 2021 |
| 14 | Electron Emission | 2019, 2021 |
| 15 | Thermionic Emission | 2018, 2021 |
| 16 | Physical Significance of Continuity Equation | 2016, 2017, 2019, 2021 |
| 17 | Main Sources of Electrical Resistance | 2021 |
| 18 | Effect of Impurity/Temp on Resistivity of Metal | 2021 |
| 19 | Formation of Depletion Layer & Width Change with Doping | 2015, 2016, 2018, 2019, 2020, 2021, 2022 |
| 20 | Free Electron Theory of Electrical Conductivity | 2015, 2017, 2021 |
| 21 | Process of Avalanche and Zener Breakdown | 2015, 2017, 2018, 2021, 2022, 2024 |
| 22 | Fermi Level and Its Dependency on Temperature | 2019, 2021 |
| 23 | Fermi Level of Intrinsic/Extrinsic Semiconductor | 2019, 2021 |
| 24 | Electron Band Structure | 2018, 2019, 2021, 2023, 2024 |
| 25 | Varactor Diode and Voltage Controlled Tuning | 2019, 2020, 2023 |
| 26 | Why Doesn’t Zener Burn in Reverse Breakdown | 2015, 2016, 2020, 2023 |
| 27 | Fermi-Dirac Function | 2020 |
| 28 | Electron Scattering Mechanism in Metals | 2015, 2016, 2017, 2020 |
| 29 | How Conductivity Varies with Temperature and Composition | 2015, 2016, 2017, 2020 |
| 30 | Transfer Characteristics of JFET | 2019 |
| 31 | Advantages of Transistor Over Vacuum Tube | 2019 |
| 32 | Emitter Heavily Doped vs Base Lightly Doped | 2019 |
| 33 | Filter Circuit (Why they are necessary) | 2015, 2017, 2022, 2023, 2024 |
| 34 | Operation of Pi Filter | 2015, 2018, 2019, 2021 |
| 35 | Zener Region | 2019, 2022, 2024 |
| 36 | P-N Junction When Reverse Biased | 2019, 2022, 2024 |
| 37 | Operation of Centre-Tapped Full Wave Rectifier | 2019 |
| 38 | Effect of Impurity on the Energy of a Semiconductor | 2019 |
| 39 | Barrier Potential and Overcoming It in P-N Junction | 2019 |
| 40 | Leakage Current | 2019 |
| 41 | Application of Liquid Crystals | 2019 |
| 42 | Transition and Diffusion Capacitance (Short Notes) | 2019 |
| 43 | Secondary and Field Electron Emission | 2019 |
| 44 | Thermally Generated Charge Carriers | 2019 |
| 45 | Wiedemann-Franz Law | 2019 |
| 46 | Difference Between Enhancement and Depletion MOSFET | 2015, 2016, 2018, 2022, 2024 |
| 47 | Tunnel and Photo Diode | 2015, 2016, 2017, 2018, 2022 |
| 48 | Advantages of FET Over BJT | 2015, 2018, 2022, 2024 |
| 49 | Junction Diode as a Protection Element for a LED | 2018, 2023 |
| 50 | Skin Effect | 2018 |
| 51 | Matthiessen’s Rule for Resistivity of Metals | 2018, 2019 |
| 52 | Work Function | 2018 |
| 53 | Surface Barrier | 2018 |
| 54 | Thermionic and Photoelectric Emissions | 2018 |
| 55 | Basic Operations of Enhancement/Depletion MOSFET | 2015, 2016, 2017, 2018, 2022, 2024 |
| 56 | Amplification Action of a Transistor | 2017, 2019 |
| 57 | Reasons for the Usage of Filter Circuits in DC Power Supply | 2015, 2017, 2022, 2023, 2024 |
| 58 | Piecewise Linear - Simplified - Ideal Device (Diode Models) | 2017 |
| 59 | N-Type/P-Type Semiconductor Is Electrically Neutral | 2016, 2017, 2022 |
| 60 | Minority Charge Carrier Storage Time (Switching Diode) | 2015, 2016, 2017, 2023 |
| 61 | Junction Diode Can Be Called as a Switch | 2017, 2022 |
| 62 | Constituents of a Transition Region | (Covered in “Formation of Depletion Layer”) |
| 63 | Effect on Carrier/Current Flow in P-N Junction (Forward Bias) | 2016, 2017, 2022, 2024 |
| 64 | Temperature Dependence of Carrier Conc. (Intrinsic/Extrinsic) | 2017, 2023 |
| 65 | Assumptions/Drawbacks of Classical Free Electron Theory | 2015, 2016, 2018 |
| 66 | Formation of Stable Bond in Solid | 2017 |
| 67 | Usage of JFET as a Constant Current Source | 2015, 2016, 2017 |
| 68 | Depletion Region of N-Channel JFET Wider Near Top | 2015, 2016 |
| 69 | Dark Current - Dark Resistance | 2016 |
| 70 | Disadvantages/Advantages of Centre-Tapped and Bridge | 2016 |
| 71 | Formation of Capacitance in a P-N Junction | 2015, 2016, 2021 |
| 72 | Physical Meaning of Energy Profile | 2015 |
| 73 | Process of Finding Potential/Bond Diagram | 2015 |
| 74 | Concentration Carriers Being More Than Their Equilibrium Value | 2015 |
| 75 | Crystalline Solid as Natural Choice for Electronic Device | 2015 |
Analogy: Think of the items with many bolded years (like Depletion Layer Formation or MOSFET Operations) as the “Chorus” of a popular song—they get repeated constantly, so you absolutely must know the lyrics. The items with only one year (like “Physical Meaning of Energy Profile”) are like a specific ad-lib that the singer only performed once in a live concert in 2015; it’s cool to know, but don’t stress if you miss it.